?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FGH30S130P rev. c0 april 2013 FGH30S130P 1300 v, 30 a shorted-anode igbt absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics notes: 1: limited by tjmax symbol description ratings unit v ces collector to emitter voltage 1300 v v ges gate to emitter voltage 25 v i c collector current @ t c = 25 o c60 a collector current @ t c = 100 o c30 a i cm (1) pulsed collector current 90 a i f diode continuous forward current @ t c = 25 o c 60 a i f diode continuous forward current @ t c = 100 o c 30 a p d maximum power dissipation @ t c = 25 o c500 w maximum power dissipation @ t c = 100 o c250 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case, max -- 0.3 o c / w r ? ja thermal resistance, junction to ambient, max -- 40 o c / w g c e e c g collector (flange) FGH30S130P 1300 v, 30 a shorted-anode igbt features ? high speed switching ? low saturation voltage: v ce(sat) = 1.75 v @ i c = 30 a ? high input impedance ?rohs compliant applications ? induction heating, microwave oven general description using advanced field stop trenc h and shorted-anode technol- ogy, fairchild ? ?s shorted-anode trench igbts offer superior con- duction and switching performances for soft switching applications. the device can operat e in parallel configuration with exceptional avalanche cap ability. this device is designed for induction heating and microwave oven.
FGH30S130P 1300 v, 30 a shorted-anode igbt ?2012 fairchild semiconductor corporation 2 www.fairchildsemi.com FGH30S130P rev. c0 package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package re el size tape width quantity FGH30S130P FGH30S130P to-247 - - 30 symbol parameter test conditions min. typ. max. unit off characteristics i ces collector cut-off current v ce = 1300, v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 500 na on characteristics v ge(th) g-e threshold voltage i c = 30ma, v ce = v ge 4.5 6.0 7.5 v v ce(sat) collector to emitter saturation voltage i c = 30a , v ge = 15v t c = 25 o c - 1.75 2.3 v i c = 30a , v ge = 15v, t c = 125 o c -1.85- v i c = 30a , v ge = 15v, t c = 175 o c -1.9 - v v fm diode forward voltage i f = 30a , t c = 25 o c-1.72.2 v i f = 30a , t c = 175 o c-2.1- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 3345 - pf c oes output capacitance - 75 - pf c res reverse transfer capacitance - 60 - pf switching characcteristics t d(on) turn-on delay time v cc = 600v, i c = 30a, r g = 10 ? , v ge = 15v, resistive load, t c = 25 o c -39- ns t r rise time - 360 - ns t d(off) turn-off delay time - 620 - ns t f fall time - 160 210 ns e on turn-on switching loss - 1.3 - mj e off turn-off switching loss - 1.22 1.6 mj e ts total switching loss - 2.52 - mj t d(on) turn-on delay time v cc = 600v, i c = 30a, r g = 10 ? , v ge = 15v, resistive load, t c = 175 o c -38- ns t r rise time - 375 - ns t d(off) turn-off delay time - 635 - ns t f fall time - 270 - ns e on turn-on switching loss - 1.59 - mj e off turn-off switching loss - 1.78 - mj e ts total switching loss - 3.37 - mj q g total gate charge v ce = 600v, i c = 30a, v ge = 15v -78-nc q ge gate to emitter charge - 4.2 - nc q gc gate to collector charge - 33.3 - nc
FGH30S130P 1300 v, 30 a shorted-anode igbt ?2012 fairchild semiconductor corporation 3 www.fairchildsemi.com FGH30S130P rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteritics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level 0.0 2 .0 4.0 6 .0 8.0 0 40 80 120 160 200 9v 8v 7v 20 v t c = 175 o c 15v 12v 10v v ge = 17v collector current, i c [a ] collector-emitter voltage, v ce [v] 0246 8 0 40 80 120 160 200 7v v ge = 17v 10v 8v 20 v t c = 25 o c 15v 12v 9v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 40 80 120 160 200 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 3.0 6.0 9.0 12.0 15.0 0 40 80 120 160 200 gate-emitt er voltage,v ge [v] common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a ] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 60a 30a i c = 15a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emitt ercase temperature, t c [ o c] 4 8 12 16 2 0 0 4 8 12 16 20 i c = 15a 30a 60a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGH30S130P 1300 v, 30 a shorted-anode igbt ?2012 fairchild semiconductor corporation 4 www.fairchildsemi.com FGH30S130P rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs figure 12. turn-off characteristics vs. gate resistance gate resistance 110 10 100 10 00 10000 30 20 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 48121620 0 4 8 12 16 20 i c = 15a 30a 60a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 0 50 100 150 200 250 300 350 0 3 6 9 12 15 common emitter t c = 25 o c 600v 400v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0.1 1 10 100 1000 0.01 0.1 1 10 100 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 0 10203040506070 100 1000 10000 common emitter v cc = 600v, v ge = 15v i c = 30a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 1 0 2 0 30 40 50 60 70 100 20 commo n emi tter v cc = 600v, v ge = 15v i c = 30a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 500
FGH30S130P 1300 v, 30 a shorted-anode igbt ?2012 fairchild semiconductor corporation 5 www.fairchildsemi.com FGH30S130P rev. c0 typical performance characteristics figure 13. turn-on characteristics vs. figure 14.turn-off characteristics vs. collector current collector current figure 15. switching loss vs. gate resistance figure 16. switching loss vs. collector current figure 17. turn off switching soa characteristics figure 18. forward characteristics 2 0 40 60 10 0 1000 2500 co mmon emi tter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c t d( off) t f switching time [ns] collector current, i c [a] 20 40 60 10 100 1000 2500 co mmon emi tter v ge = 15v, r g = 10 ? t c = 2 5 o c t c = 1 75 o c t r t d(on) switching time [ns] collector current, i c [a] 0 1020304050607080 1 10 { common emitter v cc = 600v, v ge = 15v i c = 30a t c = 25 o c t c = 175 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 0.5 } 0 10203040506070 100 1k 10k { c ommon emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c e on e off swit ching loss [uj ] collector current, i c [a] 30k { 012 1 10 80 t j = 25 o c t c = 25 o c t c = 175 o c t j = 175 o c forward voltage, v f [v] forward current, i f [a] 0.5 1 10 100 1000 1 10 100 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v]
FGH30S130P 1300 v, 30 a shorted-anode igbt ?2012 fairchild semiconductor corporation 6 www.fairchildsemi.com FGH30S130P rev. c0 figure 19 . transient thermal impedance of igbt 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGH30S130P 1300 v, 30 a shorted-anode igbt ?2012 fairchild semiconductor corporation 7 www.fairchildsemi.com FGH30S130P rev. c0 mechanical dimensions to-247a03
FGH30S130P 1300 v, 30 a shorted-anode igbt ?2012 fairchild semiconductor corporation 8 www.fairchildsemi.com FGH30S130P rev. c0 trademarks the following includes registered and unregistered trademarks an d service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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